Digital CMOS Design

Објавено: June 28, 2022
1. Course Title Digital CMOS Design
2. Code 4ФЕИТ05Л008
3. Study program КХИЕ
4. Organizer of the study program (unit, institute, department) Faculty of Electrical Engineering and Information Technologies
5. Degree (first, second, third cycle) First cycle
6. Academic year/semester III/6 7. Number of ECTS credits 6
8. Lecturer D-r Katerina Raleva
9. Course Prerequisites Passed: Electronics 2
10. Course Goals (acquired competencies): Knowledge of the principles of digital design in CMOS technology. Understands CMOS technology and its limitations. Able to analyze and design digital circuits and digital systems in CMOS technology:
– Understanding the basic principles of digital circuits design.
– Being able to analyze digital gates in terms of static transfer characteristics, noise margin, propagation delay and power consumption.
-Being able to dimensioning transistors in simple and complex logic gates in terms of delay.
-Being able to optimize a logic path comprised of logic gates in terms of its delay.
-Being able to design more complex digital blocks (registers, adders, comparator, simple ALU).
-Understanding how basic memory cells (SRAM, DRAM) work.
11. Course Syllabus: Introduction to CMOS VLSI design. MOS transistor theory. Inverters in NMOS technology (static and dynamics characteristics). Static CMOS inverter (voltage transfer characteristics and dynamics characteristics).Commercial CMOS logic gates. BiCMOS logic gates. Monostable and astable multivibrators with logic gates. Basic parameters of logic gates. Sizing of CMOS inverter. Propagation delay and power dissipation in CMOS inverter. Static CMOS design (complementary CMOS, Pass-Transistor logic, pseudo-NMOS logic, DCVSL). Dynamic CMOS design (dynamic CMOS inverter, cascading, domino logic). CMOS design of sequential logic gates (static and dynamic latches and flipflops). Programmable memories (ROM, PROM, EPROM, EEPROM, FLASH). Volatile memories (SRAM, DRAM, SSRAM, SDRAM, DDR, RDRAM). Read and write operations in SRAM and DRAM memory cell.
12. Learning methods: Blended teaching method: lecturing, tutorials supported by presentations and visualization of concepts, active participation of students through tests and assignments, all supported by learning management system
13. Total number of course hours 3 + 1 + 1 + 0
14. Distribution of course hours 180
15. Forms of teaching 15.1. Lectures-theoretical teaching 45
15.2. Exercises (laboratory, practice classes), seminars, teamwork 30
16. Other course activities 16.1. Projects, seminar papers 0
16.2. Individual tasks 15
16.3. Homework and self-learning 90
17. Grading 17.1. Exams 10
17.2. Seminar work/project (presentation: written and oral) 0
17.3. Activity and participation 30
17.4. Final exam 60
18. Grading criteria (points) up to 50 points 5 (five) (F)
from 51to 60 points 6 (six) (E)
from 61to 70 points 7 (seven) (D)
from 71to 80 points 8 (eight) (C)
from 81to 90 points 9 (nine) (B)
from 91to 100 points 10 (ten) (A)
19. Conditions for acquiring teacher’s signature and for taking final exam Lectures and tutorials attendance and successful completion of lab exercises.
20. Forms of assessment During the semester, two partial written exams are provided (at the middle and at the end of the semester, lasting 150 minutes) and a test of laboratory exercises (after the exercises). For students who have passed the partial exams and the test of laboratory exercises, a final oral exam can be conducted (duration 60 minutes). The points from the partial exams, the points from the homework assignments and the points from the laboratory exercises, as well the points of the final oral exam are included in the final grade.
In the planned exam sessions, a written exam is taken (duration 180 minutes). For students who have passed the written exam and the laboratory exercise test, a final oral exam (duration 60 minutes) can be administered. The points from the written exam, the points from the homework assignments and the points from the laboratory exercises, as well the points from the final oral exam are included in the final grade.
It is allowed to use a calculator during the exam, but it is not allowed to use books, scripts, manuscripts or notes of any kind, as well as mobile phone, tablet or any other electronic device.
21. Language Macedonian and English
22. Method of monitoring of teaching quality Internal evaluation and surveys
23. Literature
23.1. Required Literature
No. Author Title Publisher Year
1 Adel C. Sedra and Kenneth C. Smith Microlelectronics Circuits 7th Edition Oxford University Press 2015
23.2. Additional Literature
No. Author Title Publisher Year
1 Neil H.E. Weste and David Harris CMOS VLSI Design: a circuits and systems perspective Addison Wesley 2005
2 J. M. Rabaey, A. Chandrakasan and B. Nikolic Digital Integrated Circuits (2nd edition) Prentice Hall 2003