Course: From Microelectronics to Nanoelectronics
Code: 3ФЕИТ05012
ECTS points: 6 ECTS
Number of classes per week: 3+0+0+3
Lecturer: Prof. Dr. Katerina Raleva
Course Goals (acquired competencies): The course offers a thorough knowledge on micro- and nano-technologies; ability to understand the limits of electronic design with scaling of CMOS technology and the new transistor architectures. The student will be able to apply the new nanoscale transistors and memories in the design of electronic circuits and systems.
Course Syllabus: Introduction to microelectronics fabrication (lithography, diffusion, etching, ion implantation, metalization, packaging). Theory of MOS capacitor. Physics of MOSFET – long channel and short channel devices. CMOS technology. Scaling MOSFET and Moore’s Law. Limits of CMOS scaling- bulk CMOS ans SOI CMOS. New transistor architectures: fully-depleted SOI, dual-gate, FinFET, gate-all-around transistors. Semiconductor memories (SRAM, DRAM, flash). Integration of technologies. BiCMOS-process, integrated optoelectronics. Introductory concept of nanotechnology. Nanomaterials and nanostructures fabrication techniques (top-down, bottom-up, self-assembly). Nanoelectronics: single electron transistor, nanowire and carbon nanotube transistors, ReRAM, few electron memories.
Literature:
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Required Literature |
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No. |
Author |
Title |
Publisher |
Year |
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1 |
Yuan Taur and Tak H. Ning | Fundamentals of Modern VLSI Devices (2nd Edition) | Cambridge University Press | 2009 |
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2 |
Jan M. Rabaey, Anantha Chandrakasan, and Borivoje Nikolic | Digital Integrated Circuits: A Design Perspective (2nd Edition) | Prentice Hall | 2005 |
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Additional Literature |
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No. |
Author |
Title |
Publisher |
Year |
|
1 |
R.F. Pierret | Field Effect Devices (Volume 4 on Modular Series on Solid State Devices) | Prentice Hall | 2001 |
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2 |
Konstantin K. Likharev | Single Electron Devices and Their Applications (a review paper) | Proc. IEEE, vol. 87, pp. 606-632 | 1999 |
