Power Semiconductor Devices

Објавено: July 17, 2023
1. Course Title Power Semiconductor Devices
2. Code 4ФЕИТ05012
3. Study program 18-ENEL
4. Organizer of the study program (unit, institute, department) Faculty of Electrical Engineering and Information Technologies
5. Degree (first, second, third cycle) Second cycle
6. Academic year/semester I/1   7.    Number of ECTS credits 6.00
8. Lecturer Dr Katerina Raleva
9. Course Prerequisites  
10. Course Goals (acquired competencies):

The course is designed to introduce important semiconductor device technologies for power electronics applications.  After completing the course, student will be able: •To understand the concepts related with power switches and its requirements • To know about the developments and characteristics of Silicon Carbide (SiC) and Galium Nitride (GaN) devices • To identify a suitable device for the application • To have a fundamental understanding on the device physics of the most important semiconductor devices for these applications   • To select and apply the fundamental physical models underlying the operation of high voltage/high current semiconductor devices • To design proper driving circuits and protection circuits for power devices • To understand the thermal characteristics of power devices and the ability to design heat sink for the power devices.
11. Course Syllabus:

Trends in the design of power semiconductor devices. Comparison between power and signal semiconductor devices – physics and design. Wide bandgap materials (SiC and GaN) for power semiconductor devices. Cross-section, device physics, static and dynamic characteristics, thermal characteristics and safety operation area of: -power  BJT, thyristor, -power MOSFET, IGBT, -SiC transistor and GaN HEMT.  Drivers for power devices. Snubber circuits.   Thermal analysis. Modeling and simulation of dynamic characteristics of power semiconductor devices.
12. Learning methods:

Lectures with presentations, homework and project assignments
13. Total number of course hours 180
14. Distribution of course hours 3 + 3
15. Forms of teaching 15.1 Lectures-theoretical teaching 45 hours
15.2 Exercises (laboratory, practice classes), seminars, teamwork 45 hours
16. Other course activities 16.1 Projects, seminar papers 30 hours
16.2 Individual tasks 30 hours
16.3 Homework and self-learning 30 hours
17. Grading
17.1 Exams 40 points
17.2 Seminar work/project (presentation: written and oral) 40 points
17.3. Activity and participation 20 points
17.4. Final exam 0 points
18. Grading criteria (points) up to 50 points 5 (five) (F)
from 51 to 60 points 6 (six) (E)
from 61 to 70 points 7 (seven) (D)
from 71 to 80 points 8 (eight) (C)
from 81 to 90 points 9 (nine) (B)
from 91 to 100 points 10 (ten) (A)
19. Conditions for acquiring teacher’s signature and for taking final exam completed homework and project assignments
20. Forms of assessment written tests and oral presentation of the final project
21. Language Macedonian and English
22. Method of monitoring of teaching quality Internal evaluation and surveys
23. Literature
23.1.       Required Literature
No. Author Title Publisher Year
1. B. J. Baliga Fundamentals of Power Semiconductor Devices, 2nd edition Springer International Publishing 2019
2. N. Mohan, T. Undeland, W. Robbins Power Electronics: Converters, Applications and Design, 3rd Editin Wiley 2002
23.2.       Additional Literature
No. Author Title Publisher Year
1.  B. J. Baliga  Advanced Power MOSFET Concepts  Springer  2010
2.  Alex Lidow, Michael de Rooij, Johan Strydom, David Reusch and John Glaser  GaN Transistors for Efficient Power Conversion, 3rd Edition  John Wiely and Sons Ltd.  2020