Power Semiconductor Devices
Course: Power Semiconductor Devices
ECTS points: 6 ECTS
Number of classes per week: 3+0+0+3
Lecturer: Prof. Dr. Katerina Raleva
Course Goals (acquired competencies): The student will gain knowledge of the modern power semiconductor devices (static and dynamic electrical characteristics, FBSOA and RBSOA, drivers, thermal protection) and to implement them in power circuits and systems. Skill to select the most appropriate power device that satisfy the design constraints.
Course Syllabus: Trends in the design of power semiconductor devices. Comparison between power and signal semiconductor devices – physics and design. Static and dynamic characteristics of power semiconductor devices and integrated components (Power MOSFET, IGBT, SIT, MOS-thyristor, ETO). Thermal analysis. Drivers for power devices. Snubber circuits. Modeling and simulation of dynamic characteristics of power semiconductor devices.
|B. J. Baliga||Fundamentals of Power Semiconductor Devices||Springer Science||2008|
|N. Mohan, T. Undeland, W. Robbins||Power Electronics: Converters, Applications and Design||John Wiley and Sons||2002|
|B. K. Bose||Modern Power Electronics: Evolution, Technology and Applications [Chapter 3: Power Semiconductor Devices and Power Integrated Circuits]||IEEE Press||1992|