Power Semiconductor Devices

Објавено: March 13, 2019

Power Semiconductor Devices

Course: Power Semiconductor Devices

Code: 3ФЕИТ05007

ECTS points: 6 ECTS

Number of classes per week: 3+0+0+3

Lecturer: Prof. Dr. Katerina Raleva

Course Goals (acquired competencies): The student will gain knowledge of the modern power semiconductor devices  (static and dynamic electrical characteristics,  FBSOA and RBSOA, drivers, thermal protection) and to implement them in power circuits and systems. Skill to select the most appropriate power device  that satisfy the design constraints.

Course Syllabus: Trends in the design of power semiconductor devices. Comparison between power and signal semiconductor devices – physics and design. Static and dynamic characteristics of power semiconductor devices and integrated components (Power MOSFET, IGBT, SIT, MOS-thyristor, ETO). Thermal analysis. Drivers for power devices. Snubber circuits. Modeling and simulation of dynamic characteristics of power semiconductor devices.

Literature:

Required Literature

No.

Author

Title

Publisher

Year

1

B. J. BaligaFundamentals of Power Semiconductor DevicesSpringer Science2008

2

N. Mohan, T. Undeland, W. RobbinsPower Electronics: Converters, Applications and DesignJohn Wiley and Sons2002

Additional Literature

No.

Author

Title

Publisher

Year

1

B. K. BoseModern Power Electronics: Evolution, Technology and Applications [Chapter 3: Power Semiconductor Devices and Power Integrated Circuits]IEEE Press1992