Course: Semiconductor Device Modeling and Simulation

Code: 3ФЕИТ12004

ECTS points: 6 ECTS

Number of classes per week: 3+0+0+3

Lecturer: Prof. Dr. Dragica Vasileva

Course Goals (acquired competencies): The course offers a thorough knowledge on the field of semiconductor device modeling on a physical level. Ability to understand multiple scale transport in semiconductors and skill to design their own 2D (two-dimensional) drift-diffusion or particle based device simulator. Ability to design novel simulation methods needed for modeling state-of-the-art nanoscale devices.

Course Syllabus: Introduction to computational electronics – transistor history and why computational electronics. Physics of semiconductor devices: energy band structure of semiconductors, mobility carriers dynamics, semi-classical transport theory, Boltzmann Transport Equation, scattering events and RTA approximation. An overview of numerical methods for solving continuity and Poisson equations. Drift-diffusion (DD) equations: physical limitations, methods for solving DD-equations. Modeling of carrier mobility. Models of carrier mobility used in commercial device simulators. Hydrodynamic model. Commercial simulators: PADRE, Silvaco and DESSIS. Modeling the tunneling current through gate: type of tunneling mechanisms through gate. Quantum effects.

Literature: